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Polar TM
Power MOSFET
IXTA3N100P
IXTH3N100P
IXTP3N100P
V DSS
I D25
R DS(on)
= 1000V
= 3.0A
≤ 4.8 Ω
N-Channel Enhancement Mode
Avalanche Rated
TO-263 (I XTA )
G
S
(TAB)
Symbol
V DSS
V DGR
Test Conditions
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C, R GS = 1M Ω
Maximum Ratings
1000
1000
V
V
TO-220 (I XTP )
V GSS
V GSM
Continuous
Transient
± 20
± 30
V
V
G
D S
(TAB)
I D25
I DM
I A
E AS
dV/dt
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 150 ° C
3
6
3
200
10
A
A
A
mJ
V/ns
TO-247 (IXTH)
S
P D
T J
T JM
T stg
T L
T SOLD
T C = 25 ° C
1.6mm (0.062) from case for 10s
Plastic body for 10s
125
-55 ... +150
150
-55 ... +150
300
260
W
° C
° C
° C
° C
° C
G
D
G = Gate
S = Source
Features
(TAB)
D = Drain
TAB = Drain
M d
Weight
Mounting torque
TO-263
TO-220
TO-247
(TO-220)
1.13 / 10
2.5
3.0
6.0
Nm/lb.in.
g
g
g
International standard packages
Unclamped Inductive Switching
(UIS) rated
Low package inductance
- easy to drive and to protect
Advantages
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
Easy to mount
Space savings
BV DSS
V GS = 0V, I D = 250 μ A
1000
V
High power density
V GS(th)
I GSS
I DSS
V DS = V GS , I D = 250 μ A
V GS = ± 20V, V DS = 0V
V DS = V DSS
V GS = 0V
T J = 125 ° C
2.5
4.5
± 50
5
250
V
nA
μ A
μ A
Applications:
Switched-mode and resonant-mode
power supplies
DC-DC Converters
Laser Drivers
R DS(on)
V GS = 10V, I D = 0.5 ? I D25 , Note 1
4.8
Ω
AC and DC motor controls
Robotics and servo controls
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DS99767A(4/08)
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